Publication: Technical developments and principal results of vertical feeding method for GaSb and GaInSb alloys
Loading...
Official URL
Full text at PDC
Publication Date
2007
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
Amer Inst Physics
Citations
Exportar
Abstract
In this work, the experimental set-up of the Vertical Feeding Method (VFM) which has been used for the preparation of GaSb and GaInSb materials is presented. The different elements of the set-up are detailed as well as the preparation process. The different configurations that have been used for material production are briefly described and the principal results are summarized. In the case of Te-doped GaSb materials, the study, focused on the grain size and structure of the as-grown materials, showed that single crystals can be obtained with the VFM. In the case of GaInSb materials, the study, focused on the spatial indium distribution in the solid phase prepared with the different VFM configurations, showed that an effective band edge reduction can be achieved.
Description
© American Institute of Physics.
World Conference on Thermophotovoltaic Generation of Electricity (7. 2006. Madrid, España).
This work has been carried out in the frame of the Fifth Framework European Programme for research, HPRNCT 2001-00199 project. Support from MCYT through 97projects, MAT 2003-09873, ESP 2004-0041-E and MAT2003-00455 is also acknowledged.
UCM subjects
Unesco subjects
Keywords
Citation
1. O.V. Sulima, A.W. Bett, P.S. Dutta, H. Ehsani and R.J. Gutmann, Proceedings of the 16th European PV Solar Energy Conference,VA2.24, Glasgow (UK), 2000.
2. J. Vincent, D. Martín, V. Bermúdez, C. Algora and E. Diéguez, proceding of TPV6, AIP Conf. Proc.738, 368 (2004).
3. A. Mitric, T.Duffar, C. Diaz-Guerra, V. Corregidor, L. C. Alves, C. Garnier, G. Vian J. Cryst. Growth 287, 224-229 (2006).
4. Dutta, P.S., and Ostrogorsky, A.G., J. Cryst. Growth 194, 1-7 (1998).
5. Tanaka A., A. Watanabe, M. Kimura, T. Sukegawa, J. of Crystal Growth 135, 269-272 (1994).
6. A. Mitric, J. Vincent, R. Caillard, C. Stelian, V. Bermudez, E. Dieguez and T. Duffar Proceding of TPV6. AIP Conf. Proc. 738, 377 (2004).
7. O. Bonino, P. De Rango, R. Tournier, J. of Magnetism and Magnetic Materials 212 (2000) 225-230.
8. S Goda, T. Moratani, Y. Hatanka, H. Shimizu and I. Hide IEEE First World PV Conf. (1994).
9. G. Dour, E. Ehret, A. Laugier, D. Sarti, M. Garnier, F. Durand J.Crystal Growth 193 (1998) 230.
10. J. Vincent, V Bermudez, E. Dieguez. Eur. J. Appl. Phys. 27, 419-421 (2004)
11. J. Vincent, V. Bermudez, E. Dieguez, L.C. Alves, V. Corregidor, N.P. Barradas J. Cryst. Growth 275 (2005) e537-e542.
12. J. Vincent, C. Díaz – Guerra , J. Piqueras, A. Amariei, E.K. Polychroniadis and E. Dieguez. J. Cryst. Growth 289 (2006) 18-23.
13. J. Vincent, C. Díaz – Guerra , J. Piqueras and E. Dieguez. J. Cryst. Growth 293, (2006) 285-290.
14. GaSb samples supplied by Wafer Technology Ltd.
15. T.S. Moss, Proc. Phys. Soc. London Sect. B 76 (1954) 775.
16. E. Burstein, Phys. Rev. 93 (1954) 632.
17. A.S. Filipchenko, L.P. Bolshakov, A. Naurizbaev, A.G. Braginskaya, A.N. Popov, phys. stat. sol. (a) 48 (1978) K115.
18. J. Vincent, E. Dieguez Accepted for publication J. Cryst. Growth.
19. J. Vincent, E. Dieguez Sent for publication J. Opto. Adv. Mat.
20. R. Trivedi, W.Kurz, Acta Metal. 34 (1986) 1663.
21. J. Allegre, M. Averous, R. Jourdain, A. Joullie Journal of Luminescence 11 (1976) 339-347.