Evidence of phosphorus incorporation into InGaAs/InP epilayersafter thermal annealing



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Mártil de la Plaza, Ignacio and González Díaz, Germán (2003) Evidence of phosphorus incorporation into InGaAs/InP epilayersafter thermal annealing. Journal of Applied Physics, 93 (11). pp. 9019-9023. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.1565175


We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman signal associated with InP-like modes was detected in the annealed samples. The effect is also observed in samples where the substrate was protected by a SiNx:H capping and were annealed in arsenic atmosphere, thus ruling out the possibility of a surface contamination by atmospheric phosphorus evaporated from the InP substrate.. Protruding regions. of a few microns were observed on the surface, which were identified as misoriented In1-xGaP and InP crystals by means of micro-Raman measurements. (C) 2003 American Institute of Physics.

Item Type:Article
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© 2003 American Institute of Physics. The authors wish to thank Professor J. Jiménez for his useful comments on the manuscript. This work was partially supported by DGICYT Grant No. PB97-1254 and by CICYT Grant No. TIC-98/0740. One of the authors (S. H.) acknowledges support from Departament d’Universitats i Recerca de la Generalitat de Catalunya.

Uncontrolled Keywords:Raman-Scattering, Implantation Damage, Ion-Implantation, In(1-x)GaxAsyP(1-y), InP, Si, In(0.53)Ga(0.47)As, Behavior, Alloys, Modes.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26140
Deposited On:10 Jul 2014 08:46
Last Modified:10 Dec 2018 14:58

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