Porosity-induced gain of luminescence in CdSe



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Monaico, E. and Ursaki, V. V. and Urbieta Quiroga, Ana Irene and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier and Boyd, R. W. and Tiginyanu, I. M. (2004) Porosity-induced gain of luminescence in CdSe. Semiconductor Science and Technology, 19 (12). L121-L123. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/19/12/L04


Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ. UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter of 30 nm, stretching perpendicularly to the initial surface. At the same time, pronounced nonuniformities in the spatial distribution of pores were evidenced in samples subjected to anodic etching in the dark. Gain of luminescence was observed in some porous regions and attributed to the formation of ring microcavities for light in the porous network.

Item Type:Article
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© 2004 IOP Publishing Ltd Printed in the UK.
This work was supported by US Civilian Research and Development Foundation under grant nos ME2-2527 and MR2-995, MCYT under grant no MAT2003-00455 and Supreme Council for Research and Technological Development of Moldova under grant no 4-031P.

Uncontrolled Keywords:Nonlinear-Optical Materials, Photoluminescence
Subjects:Sciences > Physics > Materials
ID Code:26173
Deposited On:08 Jul 2014 15:27
Last Modified:31 Dec 2020 00:03

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