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Monaico, E. and Ursaki, V. V. and Urbieta Quiroga, Ana Irene and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier and Boyd, R. W. and Tiginyanu, I. M. (2004) Porosity-induced gain of luminescence in CdSe. Semiconductor Science and Technology, 19 (12). L121-L123. ISSN 0268-1242
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Official URL: http://dx.doi.org/10.1088/0268-1242/19/12/L04
Abstract
Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ. UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter of 30 nm, stretching perpendicularly to the initial surface. At the same time, pronounced nonuniformities in the spatial distribution of pores were evidenced in samples subjected to anodic etching in the dark. Gain of luminescence was observed in some porous regions and attributed to the formation of ring microcavities for light in the porous network.
Item Type: | Article |
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Additional Information: | © 2004 IOP Publishing Ltd Printed in the UK. |
Uncontrolled Keywords: | Nonlinear-Optical Materials, Photoluminescence |
Subjects: | Sciences > Physics > Materials |
ID Code: | 26173 |
Deposited On: | 08 Jul 2014 15:27 |
Last Modified: | 31 Dec 2020 00:03 |
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