Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers

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Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier (2004) Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers. European Physical Journal-Applied Physics, 27 (1-mar). pp. 227-230. ISSN 1286-0042

Official URL: http://dx.doi.org/10.1051/epjap:2004091




Abstract

Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the nature and spatial distribution of defects and impurities in n-type epitaxial 4H-SiC. CL microscopy reveals the existence of 6H-SiC polytype inclusions, while CL spectra recorded at different excitation conditions show luminescence emission related to deep levels in the SiC epilayer. Deconvolution of the mentioned spectra indicates the complex character of the deep-level CL emission, that is actually composed of four bands centred near 2.72, 2.56, 2.42 and 2.00 eV at 88 K. The origin of these bands is discussed considering previous deep level transient spectroscopy measurements carried out in the same material investigated in the present work.


Item Type:Article
Additional Information:

© E D P Sciences.
International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (10. 2003. Batz sur Mer, Francia).

Uncontrolled Keywords:Silicon-Carbide, Epitaxial-Growth, Schottky Diodes,Defects, Crystals, Centers
Subjects:Sciences > Physics > Materials
ID Code:26187
Deposited On:08 Jul 2014 15:47
Last Modified:08 Jul 2014 15:47

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