Assessment of InGaSb crystals by cathodo-luminescence microscopy and spectroscopy



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Chioncel, M. F. and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Duhanian, N. and Duffar, T. (2004) Assessment of InGaSb crystals by cathodo-luminescence microscopy and spectroscopy. Journal of Optoelectronics and Advanced Materials, 6 (1). pp. 239-241. ISSN 1454-4164


Low band-gap InGaSb crystals are of interest for the development of thermo-photo-voltaic (TPV) cells and other devices operating in the infrared spectral range. In this work, cathodoluminescence (CL) in the scanning electron microscope (SEM) has been applied to study the homogeneity of InGaSb material grown by the vertical Bridgman technique with regard to effective incorporation of In to the ternary alloy and the nature and distribution of defects influencing the luminescence properties of this semiconductor. Back-scattered electron imaging and wavelength dispersive X-ray mapping were used as complementary techniques to CL for analysis of chemical composition and element distribution. The results show that local CL spectra provide information on the effective formation of the alloy, not revealed by other techniques.

Item Type:Article
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© Natl Inst Optoelectronics.
This work was carried out in the frame of the Fifth Framework European Programme for research; HPRN-CT 2001-00199 project. MFC acknowledges European Commission for financial support.

Uncontrolled Keywords:Gasb, Growth, Alloys, Insb
Subjects:Sciences > Physics > Materials
ID Code:26215
Deposited On:08 Jul 2014 16:39
Last Modified:22 Jul 2014 08:40

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