Electron-beam-induced current study of electrically active defects in 4H-SiC



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Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier (2004) Electron-beam-induced current study of electrically active defects in 4H-SiC. Journal of Physics-Condensed Matter, 16 (2). S217-S223. ISSN 0953-8984

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Official URL: http://dx.doi.org/10.1088/0953-8984/16/2/026


Electrically active defects in epitaxial, n-type, 4H-SiC have been investigated by electron-beam-induced current (EBIC) in the scanning electron microscope. Several defects, mainly nanopipes, 6H polytype inclusions and triangular, carrot-like, defects were detected by different techniques, including atomic force microscopy and cathodoluminescence. However, EBIC images reveal that only nanopipes are electrically active. The hole diffusion length (L) was calculated at different temperatures from EBIC line scans recorded in defect-free regions. L values of 3.1+/-0.2 and 4.8+/-0.3 mum were respectively estimated at 295 and 420 K. A strong decrease of the diffusion length was observed in the proximity of the nanopipes.

Item Type:Article
Additional Information:

© 2004 IOP Publishing Ltd.
International Workshop on Beam Injection Assessment of Microstructures in Semconductors (7. 2003. Lille, Francia).
This work was supported by MCYT (project MAT2000-2119). Professor F Nava is gratefully acknowledged for providing the material investigated.

Uncontrolled Keywords:Assisted Reverse Breakdown, Carrier Diffusion Length, P(+)N Junction Diodes, Epitaxial-Growth, Carbide Diodes, Silicon, Bulk
Subjects:Sciences > Physics > Materials
ID Code:26218
Deposited On:15 Jul 2014 11:06
Last Modified:12 May 2016 16:58

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