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Castaldini, A. and Cavallini, A. and Polenta, L. and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier (2002) Characterization of thin layers of n- and p-type GaN. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 91 . pp. 308-312. ISSN 0921-5107
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Official URL: http://dx.doi.org/10.1016/S0921-5107(01)01051-0
Abstract
Technological improvement of GaN-based devices for electronic and optoelectronic applications makes essential both monitoring and controlling point and extended defects, which can have detrimental effects in device performance. For gallium nitride, thickness is a key parameter controlling the density and distribution of defects, especially extended ones. In this work highly defective thin GaN layers, both p- and n-type, have been characterized by photocurrent (PC) and time-resolved cathodoluminescence (TRCL) spectroscopy in order to evidence the presence of defect-related bands influencing the electrical and optical activity of the material. Scanning microscopy-based techniques, namely electron beam induced current (EBIC), CL imaging and optical beam induced current (OBIC) have been applied to investigate the recombination activity and the spatial distribution of the extended defects.
Item Type: | Article |
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Additional Information: | © 2002 Elsevier Science B.V. All rights reserved. |
Uncontrolled Keywords: | Molecular-Beam Epitaxy, Doped Gan, Photoluminescence, Films, Luminescence, Mg, Cathodoluminescence, Spectroscopy, Emission |
Subjects: | Sciences > Physics > Materials |
ID Code: | 26283 |
Deposited On: | 16 Jul 2014 10:30 |
Last Modified: | 12 May 2016 18:09 |
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