Publication: Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures
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2000-11
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Mártil de la Plaza, Ignacio
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Inst. Pure Applied Physics
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Abstract
The influence of the dielectric composition and post deposition rapid thermal annealing (RTA) treatments on the electrical characteristics of low nitrogen content plasma-deposited Al/SiNx:H/InP structures were analyzed. To obtain the interface state density, deep level transient spectroscopy (DLTS) measurements were carried out. We have also evaluated the insulator damage density, the so-called disorder-induced gap states (DIGS), by means of conductance transient analysis. As for the dielectric composition, both the x = 0.97 and x = 1.43 values provide interfacial state density and DIGS damage values of the same order of magnitude. In the x = 0.97 case, RTA treatments reduce the insulator damage moving it towards the interface. In the x = 1.43 case this behavior is only observed for RTA temperatures lower than 500 degreesC. So, moderate temperature (<500<degrees>C) RTA treatments improve DIGS damage. This is an important result in terms of fabricating bi-layered metal-insulator-semiconductor (MIS) structures that not only have good-quality interfaces, but also good dielectric properties.
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© 2000 The Japan Society of Applied Physics. The authors would like to thank C. A. I. de Implantación Iónica of the Complutense University in Madrid for technical assistance with the ECR-CVD system. This research was partially supported by the Spanish DGESIC under grant ns. TIC 1FD97-2085 and TIC 98/0740.
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