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Zaldivar, M.H. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (2001) Study of growth hillocks in GaN : Si films by electron beam induced current imaging. Journal of Applied Physics, 90 (2). pp. 1058-1060. ISSN 0021-8979
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Official URL: http://dx.doi.org/10.1063/1.1379773
Abstract
Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at the center. The results are explained by the inhomogeneous distribution of charged point defects and impurities at the hillocks.
Item Type: | Article |
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Additional Information: | © 2001 American Institute of Physics. |
Uncontrolled Keywords: | Grain-Boundaries |
Subjects: | Sciences > Physics > Materials |
ID Code: | 26298 |
Deposited On: | 16 Jul 2014 10:53 |
Last Modified: | 16 Jul 2014 10:53 |
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