Publication: Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix
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Publication Date
2002-11-13
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Piqueras de Noriega, Javier
Golubev, VG.
Kurdyukov, D.A.
Pevtsov, A. B.
Zamoryanskaya, M. V.
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Amer Inst Physics
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Abstract
Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to investigate the local electronic behavior of Pt-Si nanostructures fabricated in an opal matrix formed by silica spheres of 250 nm diameter. Si and Pt are regularly distributed inside the opal pores and form nanoscale metal-semiconductor-metal junctions. Normalized differential conductance curves enable us to study the distribution of Pt and Si and to detect the presence of regions showing a surface band gap in the range 0.5-0.8 eV, possibly associated with the formation of silicides. STS appears as a suitable technique for the electrical characterization of opal-based nanostructures.
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© 2000 American Institute of Physics.
This work was supported by DGES (Project No. PB96-0639), the Russian R&D program ‘‘Nanostructures’’ (Grant No. 97-2016) and RFBR under Grant No. 98-02-17350.
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