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Herrera Zaldiva, M. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier and Sukhoveyev, W. and Ivantsov, V. A. and Shreter, Y. G. (2000) Origin of yellow luminescence from reduced pressure grown bulk GaN crystals. Applied Physics A-Materials Science&Processing, 71 (1). pp. 55-58. ISSN 0947-8396
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Official URL: http://link.springer.com/article/10.1007/PL00021091
Abstract
Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has been found to be mainly related to rows of hillocks formed at the growth steps. The origin of the yellow luminescence is discussed PACS: 78.60Hk; 71.55Eq.
| Item Type: | Article |
|---|---|
| Additional Information: | © Springer-Verlag 2000. |
| Uncontrolled Keywords: | Light-Emitting-Diodes, Cathodoluminescence, Films |
| Subjects: | Sciences > Physics > Materials |
| ID Code: | 26358 |
| Deposited On: | 25 Jul 2014 12:06 |
| Last Modified: | 09 Jun 2016 15:27 |
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