Deformation-induced defect levels in ZeSe crystals



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Fernández Sánchez, Paloma and Piqueras de Noriega, Javier and Urbieta Quiroga, Ana Irene and Rebane, Y. T. and Shrete, Y. (1999) Deformation-induced defect levels in ZeSe crystals. Semiconductor Science and Technology, 14 (5). pp. 430-434. ISSN 0268-1242

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The influence of defects, in particular the deformation-induced defects, on the luminescence of bulk ZnSe single crystals has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Deformation has been found to cause a reduction of the total CL intensity of the sample. CL images of deformed samples reveal dark slip bands. The CL spectrum of an undeformed crystal shows the near-band-edge emission at 2.8 eV and a broad band peaked at 2.2 eV with a shoulder at about 2 eV. Deformation at low strain causes only slight spectral changes while in a heavily deformed crystal a strong relative enhancement of the deep level band in the range 2-2.2 eV is observed. The relation of these spectral changes to the deformation-induced defects is discussed. The infrared spectra show the existence of broad bands at 0.95 and 1.27 eV. However, these emissions were found to be rather insensitive to deformation.

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© 1999 IOP Publishing Ltd.
This work has been supported by DGES (Project PB96-0639). The Russian Fund for Fundamental Studies (Projects 98-01-01084 and 96-01-196825) is also acknowledged.

Uncontrolled Keywords:Cathodoluminescence, Znse
Subjects:Sciences > Physics > Materials
ID Code:26362
Deposited On:25 Jul 2014 12:44
Last Modified:09 Jun 2016 15:28

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