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Study of defects in GaN films by cross-sectional cathodoluminescence

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1998-03-01
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Zaldivar, M.H.
Piqueras de Noriega, Javier
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American Institute of Physics
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Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements.
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© 1998 American Institute of Physics. This work was supported by DGICYT (Project PB-1256). M.H.Z. thans AECI and CoNaCyt for a research grant.
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