Publication: Effect of α-Hgl_2 epitaxial growth on the defect structure of CdTe:Ge substrates
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1997-02-17
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Amer Inst Physics
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Abstract
The aα-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mu m from the α-Hgl_2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and V-Te generation at the interface take place during α-Hgl_2 epitaxial growth.
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© 1997 American Institute of Physics.
G. P. and N. S. thank Spanish MEC for research grants. This work was supported by the DGICYT (Project No. PB 93-1256) and CICYT (Project No. ESP95-0148).
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