Luminescence from growth topographic features in GaN : Si films



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Zaldivar, M.H. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1998) Luminescence from growth topographic features in GaN : Si films. Journal of Applied Physics, 83 (1). pp. 462-465. ISSN 0021-8979

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Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the nature of defects responsible for the luminescence associated with round and hexagonal-like topographic features of GaN:Si films. Round hillocks of the size of a few microns, which sometimes have a nanopipe related central hole, do not influence the luminescence emission of the film. Hillocks with sizes of several tens of microns show a marked CL contrast at the center and at the border. The origin of the observed contrast is attributed to a growth induced inhomogeneous distribution of point defects and impurities. Radiation with the electron beam of the scanning microscope causes a decrease of the CL intensity without spectral changes.

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© © 1998. All rights reserved.
This wirk was supported by DGICYT (Proyect No. PB-1256). M.H.Z. thanks AECI for a research grand.

Subjects:Sciences > Physics > Materials
ID Code:26433
Deposited On:29 Jul 2014 11:50
Last Modified:29 Jul 2014 11:50

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