Publication: Luminescence from growth topographic features in GaN : Si films
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1998-01-01
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American Institute of Physics
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Abstract
Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the nature of defects responsible for the luminescence associated with round and hexagonal-like topographic features of GaN:Si films. Round hillocks of the size of a few microns, which sometimes have a nanopipe related central hole, do not influence the luminescence emission of the film. Hillocks with sizes of several tens of microns show a marked CL contrast at the center and at the border. The origin of the observed contrast is attributed to a growth induced inhomogeneous distribution of point defects and impurities. Radiation with the electron beam of the scanning microscope causes a decrease of the CL intensity without spectral changes.
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© © 1998. All rights reserved.
This wirk was supported by DGICYT (Proyect No. PB-1256). M.H.Z. thanks AECI for a research grand.
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