Impacto
Downloads
Downloads per month over past year
Panin, G. N. and Dutta, P. S. and Piqueras de Noriega, Javier and Dieguez, E. (1995) P-to n-type Conversion in GaSb by ion-beam milling. Applied Physics Letters, 67 (24). pp. 3584-3586. ISSN 0003-6951
Preview |
PDF
286kB |
Official URL: http://dx.doi.org/10.1063/1.115325
Abstract
Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native accepters originally present in the as-grown samples.
Item Type: | Article |
---|---|
Additional Information: | (C) 1995 American Institute of Physics. |
Uncontrolled Keywords: | Implanted GaSb, Hg_(1-X)Cd_xTe |
Subjects: | Sciences > Physics > Materials |
ID Code: | 26820 |
Deposited On: | 01 Oct 2014 13:49 |
Last Modified: | 01 Oct 2014 13:49 |
Origin of downloads
Repository Staff Only: item control page