The EL2 trap in highly doped GaAs:Te



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Castaldini, A. and Cavallini, A. and Fraboni, B. and Piqueras de Noriega, Javier (1995) The EL2 trap in highly doped GaAs:Te. Journal of Applied Physics, 78 (11). pp. 6592-6595. ISSN 0021-8979

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We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed.

Item Type:Article
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© 1995 American Institute of Physics.
This research has been partially supported by the Cooperation Programme “Azione Integrata” between Italy and Spain

Uncontrolled Keywords:Level Transient Spectroscopy; Electron Traps, Gaas, Defect, Diffusion, Crystals, Bulk
Subjects:Sciences > Physics > Materials
ID Code:26837
Deposited On:02 Oct 2014 14:33
Last Modified:02 Oct 2014 14:33

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