Publication: Cathodoluminescence characterization of Ge-doped CdTe crystals
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1995-08-01
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Amer Inst Physics
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Abstract
Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions.
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© 1995 American Institute of Physics.
Two of the authors (U. P. and N. V. S.) thank Spanish MEC for the postdoctoral research grants. The work has been supported by the DGICYT (PB90-1017 and PB93-1256) projects.
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