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Domínguez-Adame Acosta, Francisco and Piqueras de Noriega, Javier and Fernández Sánchez, Paloma (1991) Local distribution of deep centers in GaP studied by infrared cathodoluminescence. Applied physics Letters, 58 (3). pp. 257-259. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.104681
Abstract
Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.
Item Type: | Article |
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Additional Information: | © 1991 American Institute of Physics. |
Uncontrolled Keywords: | Vacancy Defects |
Subjects: | Sciences > Physics > Materials |
ID Code: | 27035 |
Deposited On: | 10 Oct 2014 07:56 |
Last Modified: | 09 Feb 2018 14:54 |
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