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Domínguez-Adame Acosta, Francisco and Piqueras de Noriega, Javier (1991) Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence. Journal of Applied Physics, 69 (1). pp. 502-504. ISSN 0021-8979
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Official URL: http://dx.doi.org/10.1063/1.347692
Abstract
Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast.
| Item Type: | Article |
|---|---|
| Additional Information: | © 1991 American Institute of Physics. |
| Uncontrolled Keywords: | Photo-Luminescence, Dislocations |
| Subjects: | Sciences > Physics > Materials |
| ID Code: | 27038 |
| Deposited On: | 10 Oct 2014 07:58 |
| Last Modified: | 13 Nov 2014 08:50 |
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