Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor structures



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Mártil de la Plaza, Ignacio and González Díaz, Germán and Dueñas, S. and Peláez, R. and Castán, E. and Barbolla, J. (1998) Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor structures. In Electrically based microstructural characterization II. Materials Research Society Symposium Proceedings, 500 . Materials Research Society, Pennsylvania, USA, pp. 87-92. ISBN 1-55899-405-X

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We have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200 degrees C. The electrical properties of the structures were first analyzed by Capacitance-Voltage measurements and Deep-Level Transient Spectroscopy (DLTS). Some discrepancies in the absolute value of the interface trap densities were found. Later on, Admittance measurements were carried out and room and low temperature conductance transients in the silicon nitride/semiconductor interfaces were found. The shape of the conductance transients varied with the frequency and temperature at which they were obtained. This behavior, as well as the previously mentioned discrepancies, are explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model.

Item Type:Book Section
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Symposium on Electrically Based Microstructural Characterization at the 1997 MRS Fall Meeting (2. 1997. Boston, USA). © Materials Research Society.

Uncontrolled Keywords:Engineering, Electrical-Electronic, Materials Science, Multidisciplinary, Materials Science, Characterization-Testing, Materials Science, Composites.
Subjects:Sciences > Physics > Electricity
ID Code:27059
Deposited On:13 Oct 2014 14:51
Last Modified:10 Dec 2018 14:58

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