¡Nos trasladamos! E-Prints cerrará el 7 de junio.

En las próximas semanas vamos a migrar nuestro repositorio a una nueva plataforma con muchas funcionalidades nuevas. En esta migración las fechas clave del proceso son las siguientes:

Es muy importante que cualquier depósito se realice en E-Prints Complutense antes del 7 de junio. En caso de urgencia para realizar un depósito, se puede comunicar a docta@ucm.es.

Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures



Downloads per month over past year

Mártil de la Plaza, Ignacio and González Díaz, Germán and Barbolla, J. and Castán, E. and Dueñas, S. and Peláez, R. and Pinacho, R. and Quintanilla, L. (1997) Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures. Applied physics Letters, 71 (6). pp. 826-828. ISSN 0003-6951

[thumbnail of Martil,101libre.pdf]

Official URL: http://dx.doi.org/10.1063/1.119658


Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics.

Item Type:Article
Additional Information:

© American Institute of Physics.

Uncontrolled Keywords:Silicon-Nitride, Spectroscopy.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27068
Deposited On:14 Oct 2014 10:32
Last Modified:10 Dec 2018 14:58

Origin of downloads

Repository Staff Only: item control page