Publication: Spatial distribution of vacancy defects in GaP wafers
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1988-04-15
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American Institute of Physics
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Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy‐type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared.
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© American Institute of Physics.
The authors thank Wacker-Chemitronic (DR. K. Löhnert) for providing the samples. The help of P. Fernández is acknowledged
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