Síntesis, propiedades físicas y dopado de micro- y nanoestructuras de Bi₂O₃ y MoO₃



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Vila Santos, María (2014) Síntesis, propiedades físicas y dopado de micro- y nanoestructuras de Bi₂O₃ y MoO₃. [Thesis]

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"Introduction and Main Objectives" Oxide semiconductors have generated an increasing attention in the past few years due to their interesting physical properties and their potential applications in optoelectronic devices, catalysis and gas sensors. This interest is mainly due to two structural characteristics: the presence of cations with di erent balence states and a variable oxygen content. Additionally, nowadays there is a special interest to synthesize nano and microstructures of these oxides as building blocks for technological devices. Furthermore, a particular attention is being paid to understand the variations observed in the physical properties when the size of the structure is reduced. Bismuth trioxide is an important wide band gap (2.8 - 3.25 eV) polymorph semiconductor [1-3] with interesting physical properties, such as a high refractive index, good photoconductive response and high oxygen - ion conductivity (1.5 Scm-1) at high temperature [6]. The stable phase at room temperature, monoclinic - Bi2O3, remains stable up to 1002 K. At this temperature, this phase transforms into the - Bi2O3 phase. The latter is stable between 1002 and 1097 K and presents a distorted uorite structure. On the other hand, MoO3, is also a oxide semiconductor with an energy band gap ranging between 2.9 and 3.15 eV [25-27]. This oxide belongs to the family of 2D inorganic nanomaterials that are attracting increasing attention because of their distinct properties and high speci c surface areas. This layered structure, combined with the ability of Mo ions to easily change their oxidation state makes this oxide a promising material for di erent applications (sensors, electrochromic devices, catalysis...). This thesis is focused on the growth of Bi2O3 and MoO3 nano and microstructures using a vapor - solid growth method, as well as the characterization of their structural and physical properties, regarding the potential applications of both oxides. In order to obtain these structures, the optimal parameters that lead to the growth of Bi2O3 nanorods and nanowires, as well as MoO3 nanoplates and microcrystals must be determined. Another target of the present work is the e ective doping of these structures with Eu and Er using ion implantation for optical applications...

Item Type:Thesis
Additional Information:

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, leída el 25-09-2014

Díaz-Guerra Viejo y Javier Piqueras de Noriega, Carlos
Piqueras de Noriega, Javier
Uncontrolled Keywords:Semiconductores de metal óxido
Palabras clave (otros idiomas):Metal oxide semiconductors
Subjects:Sciences > Physics > Materials
ID Code:27300
Deposited On:06 Nov 2014 14:13
Last Modified:06 Nov 2014 14:13

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