Continuous and Localized Mn Implantation of ZnO



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González Díaz, Germán and Hernández Vélez, M. and Jensen, J. and Martínez, O. and Sanz, R. and Vázquez, M. (2009) Continuous and Localized Mn Implantation of ZnO. Nanoscale research letters, 4 (8). pp. 878-887. ISSN 1931-7573

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We present results derived from continuous and localized 35 keV (55)Mn(+) ion implantations into ZnO. Localized implantations were carried out by using self-ordered alumina membranes as masks leading to ordered arrays of implanted volumes on the substrate surfaces. Defects and vacancies in the small implantation volumes of ZnO were generated due to the implantation processes besides the creation of new phases. Rapid thermal annealing was applied in the case of continuous implantation. The samples were characterized by HRSEM, GIXRD, Raman spectroscopy and RBS/C. Magnetic characterization of the samples pointed out appreciable differences among the samples obtained by the different implantation methods. This fact was mainly attributed to the different volume/surface ratios present in the implanted zones as well as to the increase of Mn atom concentrations along the grain frontiers in the nanostructured surfaces. The samples also showed a ferromagnetic transition phase at temperature value higher than room temperature.

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© Springer. We are grateful to P. Fernández and J.L. Baldonedo, Universidad Complutense, for help with the ion implantations and SEM pictures. This work was supported in part by the Spanish Ministry of Education under Grant MAT2007-6042. J. Jensen thanks the Carl Tryggers Foundation (Sweden) for financial support.

Uncontrolled Keywords:Raman-Scattering, Doped ZnO, Ferromagnetism, Nanoparticles, Fabrication, Nanowires, Crystals, Arrays, TiO2.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27402
Deposited On:25 Nov 2014 11:42
Last Modified:10 Dec 2018 14:58

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