Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices



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Parisini, A. and Tarricone, L. and Bellani, V. and Parravicini, G. B. and Díaz García, Elena and Domínguez-Adame Acosta, Francisco and Hey, R. (2001) Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices. Physical Review B, 63 (16). p. 165321. ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.63.165321


We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.

Item Type:Article
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© 2001 The American Physical Society.
We are grateful to J. C. Flores, K. Fujiwara, G. Guizzetti, M. Hilke, C. Kanyinda-Malu, A. Stella, and D. Tsui for their enlightening discussions. Work in Italy has been supported by the INFM Network ‘‘Fisica e Tecnologia dei Semiconduttori III-V’’ and in Madrid by DGES under Project MAT2000-0734.

Uncontrolled Keywords:Disordered Semiconductor Superlattices, Distributed Layer Thicknesses, Gaas/Alas Superlattices, Bloch Oscillations, Photoluminescence Properties, Photocurrent Spectroscopy, Correlated Disorder, Optical-Absorption, Dc Conductance, Quantum Wells
Subjects:Sciences > Physics > Materials
ID Code:27531
Deposited On:05 Dec 2014 10:19
Last Modified:05 Dec 2014 10:19

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