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Castro, Mario and Sanchez, A. and Domínguez-Adame Acosta, Francisco (2000) Lattice model for kinetics and grain-size distribution in crystallization. Physical Review B, 61 (10). pp. 6579-6586. ISSN 1098-0121
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Official URL: http://dx.doi.org/10.1103/PhysRevB.61.6579
Abstract
We propose a simple, versatile, and fast computational model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetic theory found in metal recrystallization and amorphous semiconductor crystallization. Our model describes in detail the kinetics of the transformation and the grain size distribution of the product material, and is in good agreement with the available experimental data. Other morphological and kinetic features amenable of experimental observation are outlined, suggesting directions for further validation of the model.
Item Type: | Article |
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Additional Information: | © 2000 The American Physical Society. |
Uncontrolled Keywords: | Avrami Kinetics, Growth, Nucleation, Recrystallization, Silicon, Films |
Subjects: | Sciences > Physics > Materials |
ID Code: | 27568 |
Deposited On: | 05 Dec 2014 11:01 |
Last Modified: | 05 Dec 2014 11:01 |
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