Electron transport across a Gaussian superlattice



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Gomez, I. and Domínguez-Adame Acosta, Francisco and Díez, E. and Bellani, V. (1999) Electron transport across a Gaussian superlattice. Journal of Applied Physics, 85 (7). pp. 3916-3918. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.369764


We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j-V characteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices.

Item Type:Article
Additional Information:

© 1999 American Institute of Physics.
Work at Madrid has been supported by CAM (Spain) under Project No. 07N/0034/1998.

Uncontrolled Keywords:Physics, Applied
Subjects:Sciences > Physics > Materials
ID Code:27588
Deposited On:09 Dec 2014 09:51
Last Modified:09 Dec 2014 09:51

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