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Díez, E. and Sánchez, Angel and Domínguez-Adame Acosta, Francisco (1995) Intentionally disordered superlattices with high-dc conductance. IEEE Journal of Quantum Electronics, 31 (11). pp. 1919-1926. ISSN 0018-9197
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Official URL: http://dx.doi.org/10.1109/3.469271
Abstract
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated, Such systems consist of quantum wells of two different thicknesses randomly distributed along the growth direction, with the additional constraint that wells of one kind always appears in pairs, Imperfections due to interface roughness are considered by allowing the quantum-well thicknesses to fluctuate around their ideal values, As particular examples, we consider wide-gap (GaAs-Ga1-xAlxAs) and narrow-gap (InAs-GaSb) superlattices. We show the existence of a band of extended states in perfect correlated disordered superlattices, giving rise to a strong enhancement of their finite-temperature de conductance as compared to usual random ones whenever the Fermi level matches this band, This feature is seen to survive even if interface roughness is taken into account, Our predictions can be used to demonstrate experimentally that structural correlations inhibit the localization effects of disorder, even in the presence of imperfections. This effect might be the basis of new, filter-like or other specific-purpose electronic devices.
Item Type: | Article |
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Additional Information: | © IEEE-Inst Electrical Electronics Engineers Inc. |
Uncontrolled Keywords: | Random-Dimer Model |
Subjects: | Sciences > Physics > Materials |
ID Code: | 27675 |
Deposited On: | 10 Dec 2014 12:52 |
Last Modified: | 16 Dec 2014 08:27 |
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