Toward graphene-based quantum interference devices

Abstract

A new type of quantum interference device based on a graphene nanoring in which all edges are of the same type is studied theoretically. The superposition of the electron wavefunction propagating from the source to the drain along the two arms of the nanoring gives rise to interesting interference effects. We show that a side-gate voltage applied across the ring allows for control of the interference pattern at the drain. The electron current between the two leads can therefore be modulated by the side gate. The latter manifests itself as conductance oscillations as a function of the gate voltage. We study quantum nanorings with two edge types (zigzag or armchair) and argue that the armchair type is more advantageous for applications. We demonstrate finally that our proposed device operates as a quantum interference transistor with high on/off ratio.