Electrical conductivity relaxation in thin-film yttria-stabilized zirconia



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Rivera Calzada, Alberto Carlos and Santamaría Sánchez-Barriga, Jacobo and León Yebra, Carlos (2001) Electrical conductivity relaxation in thin-film yttria-stabilized zirconia. Applied physics letters, 78 (5). pp. 610-612. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.1343852


We report on complex admittance measurements on ZrO_(2):Y_(2)O_(3) (YSZ) thin films in the parallel plate geometry. Highly textured YSZ thin films, grown by rf sputtering, allow measuring complex admittance free of the effect of charge blocking at grain boundaries. We have examined low-temperature (close to room temperature) regime dominated by association of oxygen vacancies. Complex admittance analyzed in terms of the modulus formalism supplies information on correlation effects in ion motion and allows obtaining an association energy for the oxygen vacancies of 0.45 eV, in agreement with previous theoretical calculations.

Item Type:Article
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© 2001 American Institute of Physics.

Uncontrolled Keywords:Ionic-conductivity; Glasses; Crystals; Dynamics.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:31158
Deposited On:01 Jul 2015 10:19
Last Modified:10 Dec 2018 14:58

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