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León Yebra, Carlos and Martín, J. M. and Santamaría Sánchez-Barriga, Jacobo and Skarp, J. and González Díaz, Germán and Sánchez Quesada, Francisco (1996) Use of Kramers-Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps. Journal of applied physics, 79 (10). pp. 7830-7836. ISSN 0021-8979
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Abstract
The use of Kramers–Kronig transforms is proposed for the treatment of admittance spectroscopy data of junctions when significant shunt conductance or series resistance is present. An algorithm has been implemented to calculate the transformations numerically and the validity of the method developed has been tested using simulated data. Two experimental systems, p-n junctions into InP made by ion implantation, and atomic-layer-epitaxy-grown CdS/CdTe heterojunctions, have been characterized using this procedure.
| Item Type: | Article |
|---|---|
| Additional Information: | © 1996 American Institute of Physics. |
| Uncontrolled Keywords: | High-resistivity; InP. |
| Subjects: | Sciences > Physics > Electricity Sciences > Physics > Electronics |
| ID Code: | 31278 |
| Deposited On: | 21 Jul 2015 08:48 |
| Last Modified: | 10 Dec 2018 14:58 |
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