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Abuin Herráez, Manuel (2015) Ultrafast atomic diffusion inducing a reversible (23√×23√)R30°↔(3√×3√)R30° transition on Sn/Si(111)∶B. Physical review letters, 114 (19). ISSN 0031-9007
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Official URL: http://dx.doi.org/10.1103/PhysRevLett.114.196101
Abstract
Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here,
we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit
cell divides its area by a factor of 4 at 250 °C. This phase transition is explained by the 24-fold degeneracy
of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster
wiggle at the surface exploring collectively the different quantum mechanical ground states.
Item Type: | Article |
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Additional Information: | ©2015 American Physical Society. |
Uncontrolled Keywords: | Charge-density-wave; Phase-transition; Semiconductor surface; Superconductivity; Sn/Ge(Iii); Order; Metal |
Subjects: | Sciences > Physics > Materials Sciences > Physics > Solid state physics |
ID Code: | 32917 |
Deposited On: | 27 Aug 2015 09:07 |
Last Modified: | 22 Apr 2016 14:23 |
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