Ultrafast atomic diffusion inducing a reversible (23√×23√)R30°↔(3√×3√)R30° transition on Sn/Si(111)∶B



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Abuin Herráez, Manuel (2015) Ultrafast atomic diffusion inducing a reversible (23√×23√)R30°↔(3√×3√)R30° transition on Sn/Si(111)∶B. Physical review letters, 114 (19). ISSN 0031-9007

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Official URL: http://dx.doi.org/10.1103/PhysRevLett.114.196101


Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here,
we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit
cell divides its area by a factor of 4 at 250 °C. This phase transition is explained by the 24-fold degeneracy
of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster
wiggle at the surface exploring collectively the different quantum mechanical ground states.

Item Type:Article
Additional Information:

©2015 American Physical Society.
Artículo firmado por 11 autores.
This work was supported by the French Agence Nationale de la Recherche (ANR) under Contract SurMott, No. NT-09-618999, and by Spanish Ministerio de Economía y Competitividad, Project No. MAT2014-59966-R.
W. S. and D. G. T. contributed equally to this work.

Uncontrolled Keywords:Charge-density-wave; Phase-transition; Semiconductor surface; Superconductivity; Sn/Ge(Iii); Order; Metal
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:32917
Deposited On:27 Aug 2015 09:07
Last Modified:22 Apr 2016 14:23

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