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Martínez Criado, Gema and Segura Ruiz, Jaime and Manh-Hung, Chu and Tucoulou, Remi and López García, Iñaki and Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (2014) Crossed Ga_2O_3/SnO_2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution. Nano letters, 14 (10). pp. 5479-5467. ISSN 1530-6984
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Official URL: http://dx.doi.org/10.1021/nl502156h
Abstract
Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local structure in crossing points in metal oxide nanowires. Thus, if intentionally grown crossed nanowires are well-patterned, an ideal model to the role of impurities in the coupling formation, structural modifications, and atomic site configuration based on crossed Ga_2O_3/SnO_2 nanowires. Our experiment opens new avenues for further local structure studies with both nanometer resolution and elemental sensitivity.
Item Type: | Article |
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Additional Information: | © 2014 American Chemical Society. |
Uncontrolled Keywords: | X-Ray-Absorption; Scanning photoelectron Microscopy; Inas nanowires; Optoelectronic devices; Electronic-structure; Building-blocks; Oxide nanowires; Gallium oxide; Zno nanorods; Spectroscopy |
Subjects: | Sciences > Physics > Materials Sciences > Physics > Solid state physics |
ID Code: | 33534 |
Deposited On: | 13 Oct 2015 16:21 |
Last Modified: | 14 Oct 2015 14:53 |
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