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Statistical anomalies of bitflips in SRAMs to discriminate MCUs from SEUs

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Publication Date
2015-09-18
Authors
Villa, Francesca
Rey, Sole
Baylac, Maud
Agapito Serrano, Juan Andrés
Puchner, Helmut
Hubert, Guillaume
Velazco, Raoul
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IEEE-Inst Electrical Electronics Engineers Inc
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Abstract
This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.
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©IEEE 2015 European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú). Date of Conference: 14-18 Sept. 2015
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[1] R. Velazco and F. J. Franco, “Single Event Effects on Digital Integrated Circuits: Origins and Mitigation Techniques,” in IEEE International Symposium on Industrial Electronics (ISIE), pp. 3322–3327, June 2007. [2] M. Wirthlin, D. Lee, G. Swift, and H. Quinn, “A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays,” IEEE Tran. Nucl. Sci., vol. 61, pp. 3080–3087, Dec 2014. [3] F. Villa, M. Baylac, S. Rey, O. Rossetto, W. Mansour, P. Ramos, R. Velazco, and G. Hubert, “Accelerator-Based Neutron Irradiation of Integrated Circuits at GENEPI2 (France),” in 2014 IEEE Radiation Effects Data Workshop (REDW), pp. 1–5, July 2014. [4] J. Beaucour, J. Segura-Ruiz, R. Cubitt, B. Giroud, E. Capria, E. Mitchell, C. Curfs, J. Royer, M. Baylac, F. Villa, and S. Rey, “Grenoble Large Scale Facilities for Advanced Characterization of Microelectronics Devices,” in 2015 IEEE Conference on Radiation Effects on Components and Systems (RADECS), p. (pending of publication), Sept 2015. [5] R. Velazco, J. A. Clemente, G. Hubert, W. Mansour, C. Palomar, F. J. Franco, M. Baylac, S. Rey, O. Rosetto, and F. Villa, “Evidence of the Robustness of a COTS Soft-Error Free SRAM to Neutron Radiation,” IEEE Tran. Nucl. Sci., vol. 61, pp. 3103–3108, Dec 2014.