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Scigaj, Mateusz and Gázquez, Jaume and Varela del Arco, María and Fontcuberta Griñó, Josep and Herranz Casabona, Gervasi and Sánchez Barrera, Florencio (2015) Conducting interfaces between amorphous oxide layers and SrTiO_3(110) and SrTiO_3(111). Solid State Ionics, 281 . pp. 68-72. ISSN 0167-2738
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Official URL: http://dx.doi.org/10.1016/j.ssi.2015.09.002
Abstract
Interfaces between (110) and (111)SrTiO_3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO_3 (a-LAO), Y:ZrO_2 (a-YSZ), and SrTiO_3 (a-STO) become conducting above a critical thickness tc. Here we show that t_c for a-LAO is not depending on the substrate orientation, i.e. t_c (a-LAO/(110)STO) ≈ t_c(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: t_c(a-LAO/(110)STO) < t_c(a-YSZ/(110)STO) < t_c(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientational-dependent enthalpy vacancy formation and diffusion. Scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces.
Item Type: | Article |
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Additional Information: | © 2015 Elsevier B.V. |
Uncontrolled Keywords: | Oxide interfaces; Oxygen vacancies; LaAlO_3/SrTiO_3 |
Subjects: | Sciences > Physics |
ID Code: | 35978 |
Deposited On: | 26 Feb 2016 18:16 |
Last Modified: | 10 Dec 2018 14:57 |
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