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Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications



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García, Héctor and Castán, Helena and Dueñas, Salvador and Bailón, Luis and García Hernansanz, Rodrigo and Olea Ariza, Javier and Prado Millán, Álvaro del and Mártil de la Plaza, Ignacio (2016) Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications. Nanoscale research letters, 11 . ISSN 1556-276X

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Official URL: http://dx.doi.org/10.1186/s11671-016-1545-z


A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.

Item Type:Article
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© 2016 The Author(s). The study has been supported by the Spanish TEC2014 under Grant Nos. 52152-C3-3-R and TEC2013-41730-R, funded by the Ministerio de Economía y Competitividad, and the P2013/MAE-2780 funded by the Comunidad de Madrid.

Uncontrolled Keywords:Interface; Deffects; Voltage; Layer.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:39027
Deposited On:04 Oct 2016 10:42
Last Modified:10 Dec 2018 14:57

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