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Olea Ariza, Javier and López, E. and Antolín, E. and Martí, A. and Luque, A. and García Hemme, Eric and Pastor, D. and García Hernansanz, Rodrigo and Prado Millán, Álvaro del and González Díaz, Germán (2016) Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap. Journal of physics D: applied physics, 49 (5). ISSN 0022-3727
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Official URL: http://dx.doi.org/10.1088/0022-3727/49/5/055103
Abstract
Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.
Item Type: | Article |
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Additional Information: | © 2016 IOP Publishing Ltd. |
Uncontrolled Keywords: | Silicon; Supersaturated; Titanium; Photoresponse |
Subjects: | Sciences > Physics > Electricity Sciences > Physics > Electromagnetism Sciences > Physics > Electronics |
ID Code: | 39343 |
Deposited On: | 07 Oct 2016 14:57 |
Last Modified: | 10 Dec 2018 14:57 |
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