Publication:
Anomalous resistivity at the structural phase transition of polycrystalline SnTe

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1979
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IOP Publishing
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Abstract
An excess resistivity has been observed in thin film polycrystalline samples of SnTe with low carrier concentration and is attributed to the additional scattering due to the phonon softening associated with the structural phase transition.
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@ 1979 The Institute of Physics
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[1] Hatta I and Kobayashi K L I 1977 Solid St. Commun. 22 775 [2] Hatta I and Rehwald W 1977 J. Phys. C: Solid St. Phys. 10 2075 [3] Iizumi M, Hamaguchi Y, Komatsubara K F and Kato Y 1975 J. Phys. Soc. Japan 38 443 [4] Katayama Y 1976 Solid St. Commun. 19 381 [5] Kawamura H 1979 Proc. Int. Summer School on Narrow Gap Semiconductors, Nimes to be published [6] Kobayashi K L I, Kato Y, Katayama Y and Komatsubara K F 1975 Solid St. Commun. 17 875 [7] Murase K, Sugai S, Higuchi T, Takaoka S, Fukunaga T and Kawamura H 1978 Physics of Semiconductors 1978: Inst. Phys. Conf. Ser. 43 p 437 [8] Novikova S I and Shelimova L E 1966 Sov. Phys. - Solid St. 7 2052 [9] Pawley G S, Cochran W, Cowley R A and Dolling G 1966 Phys. Rev. Lett. 17 753 [10] Todoroki S and Onuma Y 1974 J. Vac. Soc. Japan 17 438
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