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Clemente Barreira, Juan Antonio and Hubert, Guillaume and Franco Peláez, Francisco Javier and Vila, Francesca and Baylac, Maud and Puchner, Helmut and Velazco, Raoul and Mecha López, Hortensia (2017) Sensitivity Characterization of a COTS 90-nm SRAM at Ultra Low Bias Voltage. IEEE transactions on nuclear science, 64 (8). pp. 2188-2195. ISSN 0018-9499
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Official URL: https://doi.org/10.1109/TNS.2017.2682984
Abstract
This paper presents the characterization of the sensitivity to 14-MeV neutrons of a Commercial Off-The-Shelf (COTS) 90-nm Static Random Access Memories (SRAMs) manufactured by Cypress Semiconductor, when biased at ultra low voltage. Firstly, experiments exposing this memory at 14-MeV neutrons, when powering it up at bias voltages ranging from 0.5V to 3.3V, are presented and discussed. These results are in good concordance with theoretical predictions issued by the modeling tool MUSCA-SEP 3 (MUlti-SCAles Single Event Phenomena Predictive Platform). Then, this tool has been used to obtain Soft Error Rate (SER) predictions at different altitudes above the Earth’s surface of this device vs. its bias voltage. Finally, the effect of contamination by α articles has also been estimated at said range of bias Voltages.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Neutrons, Random access memory, Sensitivity, Power supplies, Electronic mail, Predictive models, Contamination, Low-bias voltage, COTS, SRAM, Neutron tests, Radiation hardness, Reliability, Soft error |
| Subjects: | Sciences > Physics > Electronics Sciences > Physics > Nuclear physics Sciences > Computer science > Integrated circuits Sciences > Computer science > Hardware |
| ID Code: | 41953 |
| Deposited On: | 16 Aug 2017 08:03 |
| Last Modified: | 10 Dec 2018 14:57 |
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