Publication: Contactos con células de heterounión de silicio
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2017-03-29
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Universidad Complutense de Madrid
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Abstract
El presente documento de tesis, titulado Contactos en células de heterouni ón de silicio , contiene el trabajo realizado para optar al grado de Doctor en Ciencias Físicas. A continuación se describen brevemente los seis capítulos y dos apéndices en los que se divide dicho documento. En el capítulo 1 se describen las células de heterounión de silicio (SHJ, por sus siglas en inglés), así como sus diferencias con respecto a las células convencionales de silicio con emisor difundido; especialmente en lo que concierne a los contactos. En el capítulo 2 se presentan las técnicas experimentales de preparación (sección 2.1) y caracterización (sección 2.2) de los materiales y dispositivos preparados y analizados durante este trabajo de tesis. En el capítulo 3 se trata el problema del contacto frontal en células de SHJ. Primero, se desarrolla un modelo para comprender los mecanimos de colección transversal de los portadores de carga en este tipo de células (secci ón 3.2). Después se presenta un segundo modelo que correlaciona los par ámetros del contacto frontal de las células de SHJ con su resistencia serie (sección 3.3). Por último, se corroboran experimentalmente las predicciones de los citados modelos (sección 3.4). En el capítulo 4 se analizan dos maneras alternativas de mejorar el contacto posterior de las células de SHJ. La primera es la aplicación de la técnica de contacto por microsinterizado láser (LFC, por sus siglas en inglés), que consiste en la realización de contactos puntuales entre absorbente y metal a través de una capa pasivante (sección 4.2). La segunda consiste en la introducción de un emisor de silicio microcristalino dopado de tipo p (sección 4.3) entre el absorbente y la capa metálica posterior, con la intención de crear un campo retrodifusor para los portadores minoritarios que alcanzan la parte posterior. En el capítulo 5 se resumen las conclusiones halladas a lo largo del trabajo y en el capítulo 6 se enumeran las posibles mejoras y experimentos que podrían realizarse en lo sucesivo. En los apéndices A y B se detallan algunos de los cálculos implicados en el modelo de la resistencia serie de la sección 3.3.
This thesis, entitled Contacts in Silicon-Heterojunction Solar Cells , contains the work achieved by its author in order to obtain the grade of PhD in Physics, and is divided in six chapters and two appendices. In chapter 1, Silicon-Heterojunction (SHJ) solar cells are described, and the di erences with respect to conventional di used-emitter crystalline silicon solar cells especially those related to contacts are highlighted. In chapter 2, the experimental techniques used for material- and device preparation (section 2.1) and characterization (section 2.2) are presented. In chapter 3, the problem of making good front contacts in SHJ solar cells is addressed. First, a model is developed in order to understand the chargecarrier transverse-collection mechanisms in this kind of cells (section 3.2). Then, a second model is presented, which correlates the front-contact features of SHJ cells with their series resistance (section 3.3). After that, the predictions of said models are experimentally veri ed (section 3.4). In chapter 4, two alternative ways to improve the back contact of SHJ cells are analyzed. The rst approach is based on the application of the laser- ring contact (LFC) technique, which lies in turn on the creation by laser of point contacts between the absorber and the metallic layer through a passivating layer (section 4.2). The second method consists of inserting a p-doped microcrystalline-silicon emitter between the absorber and the back metallic layer (section 4.3), with the purpose to create a back surface eld (BSF) which can reject the minority carriers reaching the absorber back surface. In chapter 5 the conclusions drawn through the whole work are summarized and, nally, in chapter 6, the future possible improvements and experiments are enumerated. In appendices A and B, some of the calculations involved in the seriesresistance model from section 3.3 are detailed.
This thesis, entitled Contacts in Silicon-Heterojunction Solar Cells , contains the work achieved by its author in order to obtain the grade of PhD in Physics, and is divided in six chapters and two appendices. In chapter 1, Silicon-Heterojunction (SHJ) solar cells are described, and the di erences with respect to conventional di used-emitter crystalline silicon solar cells especially those related to contacts are highlighted. In chapter 2, the experimental techniques used for material- and device preparation (section 2.1) and characterization (section 2.2) are presented. In chapter 3, the problem of making good front contacts in SHJ solar cells is addressed. First, a model is developed in order to understand the chargecarrier transverse-collection mechanisms in this kind of cells (section 3.2). Then, a second model is presented, which correlates the front-contact features of SHJ cells with their series resistance (section 3.3). After that, the predictions of said models are experimentally veri ed (section 3.4). In chapter 4, two alternative ways to improve the back contact of SHJ cells are analyzed. The rst approach is based on the application of the laser- ring contact (LFC) technique, which lies in turn on the creation by laser of point contacts between the absorber and the metallic layer through a passivating layer (section 4.2). The second method consists of inserting a p-doped microcrystalline-silicon emitter between the absorber and the back metallic layer (section 4.3), with the purpose to create a back surface eld (BSF) which can reject the minority carriers reaching the absorber back surface. In chapter 5 the conclusions drawn through the whole work are summarized and, nally, in chapter 6, the future possible improvements and experiments are enumerated. In appendices A and B, some of the calculations involved in the seriesresistance model from section 3.3 are detailed.
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Tesis inédita de la Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, leída el 01-04-2016