Ferromagnetism in bulk Co-Zn-O



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Quesada, A. and García, M. A. and Andrés, M. and Hernando Grande, Antonio and Fernández, J. F. and Caballero, A. C. and Martín González, M. S. and Briones, F. (2006) Ferromagnetism in bulk Co-Zn-O. Journal of applied physics, 100 (11). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.2399884


The origin of ferromagnetism in diluted magnetic semiconductors is still an open question, yielding a great deal of research across the world. This work focuses on the Co-Zn-O system. Room-temperature ferromagnetism is observed after a partial reaction of Co_3O_4 and ZnO, which can be ascribed neither to carrier mediation nor segregated cobalt metallic clusters. Another mechanism is yielding room-temperature ferromagnetism. This mechanism is associated with a partial reaction of ZnO and Co_3O_4 grains, and always appears when the starting phases (Co_3O_4 and ZnO) are present in the sample, suggesting that interfaces are involved in the origin of the observed ferromagnetism.

Item Type:Article
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©2006 American Institute of Physics.
This work has been supported by the University Complutense through the project PR1/05/13325 and CICYT project MAT2004–04843–C02–01.

Uncontrolled Keywords:Room-temperature Ffrromagnetism; Doped ZnO; Magnetic semiconductors; Thin-films; Origin; Zn1-Xcoxo; System
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:44126
Deposited On:28 Aug 2017 17:32
Last Modified:28 Aug 2017 17:32

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