Selectively excited photoluminescence from Eu-implanted GaN



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Wang, K. and Martin, R. W. and O’Donnell, K. P. and Katchkanov, V. and Nogales Díaz, Emilio and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2005) Selectively excited photoluminescence from Eu-implanted GaN. Applied physics letters, 87 (11). ISSN 0003-6951

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The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 ⁰C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High- resolution PL spectra at low temperature clearly show that emission lines ascribed to ⁵D₀-⁷F₂ (similar to 622 nm), ⁵D₀-⁷F₃ (similar to 664 nm), and ⁵D₀-⁷F₁ (similar to 602 nm) transitions ach consist of several peaks. PL excitation spectra of the spectrally resolved components of the ⁵D₀-⁷F₂ multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356 nm, and a broad subedge absorption band centred at similar to 385 nm. Marked differences in the shape of the ⁵D₀-⁷F₂ PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.

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©2005 American Institute of Physics.
The authors are grateful for the support by the European Research Training Network project RENiBEl (Contract No. HPRN-CT-2001-00297) and ORS award scheme.

Uncontrolled Keywords:Earth-doped gan; Growth; Er; Electroluminescence; Emission
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:45327
Deposited On:03 Nov 2017 18:00
Last Modified:03 Nov 2017 18:00

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