Site multiplicity of rare earth ions in III-nitrides



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O'Donnell, KP and Katchkanova, V. and Wang, K. and Martin, R.W. and Edwards, P.R. and Hourahine, B. and Nogales Díaz, Emilio and Mosselmans, J.F.W. and De Vries, B. (2005) Site multiplicity of rare earth ions in III-nitrides. In GaN, AIN, InN and their alloys. MRS Online Proceedings Library (831). Materials Research Society. ISBN 1-55899-779-2

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This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the well-documented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.

Item Type:Book Section
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© Materials Research Society.
ESSN: 1946-4274
Symposium on GaN, AIN, InN and Their Alloys. (2004. Boston)
We are grateful to the European Union for supporting this work unde Contract HRPN-CT-2001-00297

Uncontrolled Keywords:Doped gan; Photoluminescence; Er
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:45328
Deposited On:08 Nov 2017 18:03
Last Modified:10 Nov 2017 11:32

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