Subband energy in two-band delta-doped semiconductors



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Domínguez-Adame Acosta, Francisco (1996) Subband energy in two-band delta-doped semiconductors. Physics letters A, 211 (4). pp. 247-251. ISSN 0375-9601

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We study the electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ-doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ-doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.

Item Type:Article
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© Elsevier
This work is supported by CICYT (Spain) through project MAT95-0325.

Uncontrolled Keywords:Doping layer; Gaas; Mbe
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:45687
Deposited On:05 Dec 2017 18:40
Last Modified:05 Dec 2017 18:40

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