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Domínguez-Adame Acosta, Francisco (1996) Subband energy in two-band delta-doped semiconductors. Physics letters A, 211 (4). pp. 247-251. ISSN 0375-9601
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Official URL: http://dx.doi.org/10.1016/0375-9601(95)00976-0
Abstract
We study the electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ-doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ-doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.
Item Type: | Article |
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Additional Information: | © Elsevier |
Uncontrolled Keywords: | Doping layer; Gaas; Mbe |
Subjects: | Sciences > Physics > Materials Sciences > Physics > Solid state physics |
ID Code: | 45687 |
Deposited On: | 05 Dec 2017 18:40 |
Last Modified: | 05 Dec 2017 18:40 |
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