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Clemente Barreira, Juan Antonio and Hubert, Guilaume and Fraire, Juan and Franco Peláez, Francisco Javier and Villa, Francesca and Rey, Solenne and Baylac, Maud and Puchner, Helmut and Mecha, Hortensia and Velazco, Raoul (2018) SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2 MeV Neutrons. IEEE transactions on nuclear science (99). pp. 1-8. ISSN 0018-9499 (In Press)
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Official URL: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=23
Abstract
This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed for SRAM power supplies ranging from 0.5 V to 3.15 V. The experimental results yielded clear evidences of the SEU sensitivity increase at very low bias voltages. These results have been cross-checked with predictions issued from the modeling tool MUlti-SCAles Single Event Phenomena Predictive Platform (MUSCA-SEP3). Large-scale SELs and SEFIs, observed in the 90-nm and 130-nm SRAMs respectively, are also presented and discussed.
| Item Type: | Article |
|---|---|
| Additional Information: | “© © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.” |
| Uncontrolled Keywords: | COTS, SRAM, neutron tests, radiation hard- ness, reliability, soft error, low-bias voltage |
| Subjects: | Sciences > Physics > Nuclear physics Sciences > Computer science > Integrated circuits Sciences > Computer science > Hardware Sciences > Computer science > Electronics |
| ID Code: | 46620 |
| Deposited On: | 28 Feb 2018 14:48 |
| Last Modified: | 28 May 2020 07:06 |
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