Impacto
Downloads
Downloads per month over past year
Díaz Fernández, Alvaro and del Valle, N. and Diaz, E. and Domínguez-Adame Acosta, Francisco (2018) Topologically protected states in δ-doped junctions with band inversion. Physical review B, 98 (8). ISSN 2469-9950
Preview |
PDF
775kB |
Official URL: http://dx.doi.org/10.1103/PhysRevB.98.085424
Abstract
A topological boundary can be formed at the interface between a trivial and a topological insulator. The difference in the topological index across the junction leads to robust gapless surface states. Optical studies of these states are scarce in the literature, the reason being the difficulty in isolating their response from that of the bulk. In this work, we propose to deposit a δ layer of donor impurities in close proximity to a topological boundary to help in detecting gapless surface states. As we will show, gapless surface states are robust against this perturbation and they enhance intraband optical transitions as measured by the oscillator strength. These results help us to understand the interplay of surface and bulk states in topological insulators.
Item Type: | Article |
---|---|
Additional Information: | ©2018 American Physical Society. |
Uncontrolled Keywords: | Self-consistent analysis; Inverted junctions; Intersubband transitions; Interface states; Quantum-well; Semiconductor; Gaas; Insulators; Gap; Heterojunctions |
Subjects: | Sciences > Physics > Materials Sciences > Physics > Solid state physics |
ID Code: | 49597 |
Deposited On: | 25 Oct 2018 11:36 |
Last Modified: | 14 Nov 2018 11:57 |
Origin of downloads
Repository Staff Only: item control page