Topologically protected states in δ-doped junctions with band inversion



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Díaz Fernández, Alvaro and del Valle, N. and Diaz, E. and Domínguez-Adame Acosta, Francisco (2018) Topologically protected states in δ-doped junctions with band inversion. Physical review B, 98 (8). ISSN 2469-9950

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A topological boundary can be formed at the interface between a trivial and a topological insulator. The difference in the topological index across the junction leads to robust gapless surface states. Optical studies of these states are scarce in the literature, the reason being the difficulty in isolating their response from that of the bulk. In this work, we propose to deposit a δ layer of donor impurities in close proximity to a topological boundary to help in detecting gapless surface states. As we will show, gapless surface states are robust against this perturbation and they enhance intraband optical transitions as measured by the oscillator strength. These results help us to understand the interplay of surface and bulk states in topological insulators.

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©2018 American Physical Society.
The authors thank P. Rodríguez for very enlightening discussions. This research has been supported by MINECO (Grant No. MAT2016-75955). A.D.-F. acknowledges support from the UCM-Santander Program (Grant No. CT27/16-CT28/16).

Uncontrolled Keywords:Self-consistent analysis; Inverted junctions; Intersubband transitions; Interface states; Quantum-well; Semiconductor; Gaas; Insulators; Gap; Heterojunctions
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:49597
Deposited On:25 Oct 2018 11:36
Last Modified:14 Nov 2018 11:57

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