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Franco Peláez, Francisco Javier and Clemente Barreira, Juan Antonio and Mecha López, Hortensia and Velazco, Raoul (2019) Influence of Randomness during the Interpretation of Results from Single-Event Experiments on SRAMs. IEEE Transactions on device and materials reliability, 19 (1). pp. 104-111. ISSN 1530-4388
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Official URL: http://dx.doi.org/10.1109/TDMR.2018.2886358
Abstract
After having carried out radiation experiments on memories, the detected bitflips must be classified into single bit upsets and multiple events to calculate the cross sections of different phenomena. There are some accepted procedures to determine if two bitflips are related. However, if there are enough bitflips, it is possible that unrelated pairs of errors appear in nearby cells and they are erroneously taken as a multiple event. In this paper, radiation experiments are studied as a special case of the urn-and-balls problem in probability theory to estimate how the measured multiple-event cross sections must be corrected to remove the overestimation due to the false events.
Item Type: | Article |
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Additional Information: | © 2018 IEEE |
Uncontrolled Keywords: | Birthday statistics; Multiple bit upset; Multiple cell upset; Radiation; Single bit upset; Single event upset; SRAMs |
Subjects: | Sciences > Physics > Electricity Sciences > Physics > Electronics Sciences > Computer science > Integrated circuits |
ID Code: | 50397 |
Deposited On: | 07 Mar 2019 15:40 |
Last Modified: | 11 Mar 2019 08:33 |
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