Publication: Direct observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires
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Publication Date
2019-02-01
Authors
Méndez Martín, Bianchi
Rigby, Oliver M.
Stamp, Alice V.
Hindmarsh, Steve A.
Sánchez, Ana M.
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IOP Publishing
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Abstract
beta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around which a rutile SnO_2 particle is formed with [001] aligned to the [010] Ga_2O_3 trunk axis. Inside the SnO_2 particle, beta-Ga_2O_3 units occur separated periodically by hexagonal tunnels in the (210) rutile plane. Orange (620 nm) optical emission from tin oxide, with a narrow linewidth indicating localised electronic states, may be associated with this beta-Ga_2O_3 intergrowth.
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© 2019 IOP Publishing
We thank JJP Peters for his input on the multislice ADF simulation. This work has been supported by MINECO projects MAT-2015-65274-R/FEDER and M-ERANET PCIN-2017-106. MA-O acknowledges financial support from MECD (FPU contract).