Direct observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires



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Alonso Orts, Manuel and Nogales Díaz, Emilio and Méndez Martín, Bianchi and Rigby, Oliver M. and Stamp, Alice V. and Hindmarsh, Steve A. and Sánchez, Ana M. (2019) Direct observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires. Nanotechnology, 30 (5). ISSN 0957-4484

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beta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around which a rutile SnO_2 particle is formed with [001] aligned to the [010] Ga_2O_3 trunk axis. Inside the SnO_2 particle, beta-Ga_2O_3 units occur separated periodically by hexagonal tunnels in the (210) rutile plane. Orange (620 nm) optical emission from tin oxide, with a narrow linewidth indicating localised electronic states, may be associated with this beta-Ga_2O_3 intergrowth.

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© 2019 IOP Publishing
We thank JJP Peters for his input on the multislice ADF simulation. This work has been supported by MINECO projects MAT-2015-65274-R/FEDER and M-ERANET PCIN-2017-106. MA-O acknowledges financial support from MECD (FPU contract).

Uncontrolled Keywords:Sno2; Oxide; Growth; Photoluminescence; Performance; Wide band gap oxides; Transmission electron microscopy; Tunnelled intergrowth; Cathodoluminescence
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:50708
Deposited On:17 Jan 2019 13:37
Last Modified:01 Feb 2020 00:01

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